Part number:
IRGB4062DPBF
Manufacturer:
International Rectifier
File Size:
430.21 KB
Description:
Insulated gate bipolar transistor.
IRGB4062DPBF Datasheet (430.21 KB)
* C
* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA G
* 100% of the parts tested for ILM
* Positive VCE (ON) Temperature co-efficient
* Ult
IRGB4062DPBF Datasheet (430.21 KB)
IRGB4062DPBF
International Rectifier
430.21 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRGB4060DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 97073B
IRGB4060DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• • • • • • • • • • Low V.
IRGB4061DPbF - IGBT
(International Rectifier)
PD - 97189B
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology • Low switching loss.
IRGB4064DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.
IRGB4065PBF - IGBT
(International Rectifier)
..
PD - 97059B
PDP TRENCH IGBT
Features Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP.
IRGB4045DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.
IRGB4055PBF - PDP TRENCH IGBT
(International Rectifier)
PD - 97058B
PDP TRENCH IGBT IRGB4055PbF
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery
circuits in PDP appli.
IRGB4056DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 97188A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology • Low switching loss.
IRGB4059DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.
