IRGB4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGB4062DPBF Features
* C
* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA G
* 100% of the parts tested for ILM
* Positive VCE (ON) Temperature co-efficient
* Ult
