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IRGB4064DPbF

INSULATED GATE BIPOLAR TRANSISTOR

IRGB4064DPbF Features

* Low VCE (on) Trench IGBT Technology

* Low Switching Losses

* Maximum Junction temperature 175 °C

* 5µs SCSOA

* Square RBSOA

* 100% of The Parts Tested for ILM

* Positive VCE (on) Temperature Coefficient.

* Ultra Fast Soft Recovery Co-

IRGB4064DPbF Datasheet (371.39 KB)

Preview of IRGB4064DPbF PDF

Datasheet Details

Part number:

IRGB4064DPbF

Manufacturer:

International Rectifier

File Size:

371.39 KB

Description:

Insulated gate bipolar transistor.

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IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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