Part number:
IRGB4065PBF
Manufacturer:
International Rectifier
File Size:
811.57 KB
Description:
Igbt.
IRGB4065PBF Datasheet (811.57 KB)
* Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package l IRGB4065PbF IRGS4065PbF Key Parameters 300 1.75 205 1
IRGB4065PBF Datasheet (811.57 KB)
IRGB4065PBF
International Rectifier
811.57 KB
Igbt.
📁 Related Datasheet
IRGB4060DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 97073B
IRGB4060DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• • • • • • • • • • Low V.
IRGB4061DPbF - IGBT
(International Rectifier)
PD - 97189B
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology • Low switching loss.
IRGB4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IG.
IRGB4064DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.
IRGB4045DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.
IRGB4055PBF - PDP TRENCH IGBT
(International Rectifier)
PD - 97058B
PDP TRENCH IGBT IRGB4055PbF
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery
circuits in PDP appli.
IRGB4056DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 97188A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology • Low switching loss.
IRGB4059DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.
