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IGBT

IGBT DataSheet

Silan

40N60NPFD - 600V FIELD STOP IGBT

 · 437 Hits  40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A  Low conduction loss  Fast switching  High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT...
Intersil Corporation

20N60C3 - N-Channel IGBT

 · 171 Hits of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transist...
ETC

30J127 - 600V 200A IGBT MOSFET

 · 156 Hits ...
Infineon

K30H603 - IGBT

 · 150 Hits TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qu...
Fairchild Semiconductor

G40N60 - Ultrafast IGBT

 · 150 Hits • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A • High input impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.) Appl...
TRinno

TGAN20N135FD - Field Stop Trench IGBT

 · 148 Hits •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS ...
Infineon Technologies

K50H603 - IGBT

 · 115 Hits C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C ...
IXYS

30N60 - High speed IGBT

 · 111 Hits l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capabi...
Infineon Technologies

H20R1202 - Reverse Conducting IGBT

 · 103 Hits • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages ® • TrenchStop and Fieldstop technology for 1200...
Toshiba

50JR22 - Silicon N-Channel IGBT

 · 103 Hits (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-sp...
Danfoss Silicon Power GmbH

DP15H1200T101617 - E2 IGBT

 · 97 Hits 101623 PIM brake NTC DP10H600T 101622 DP15H600T 101621 DP20H600T 101620 DP30H600T 101619 DP50H600T * 1016xx DP10H1200T 101618 DP15H1200T 101617 DP25H1...
Fairchild Semiconductor

FGH40N60SFD - 40A Field Stop IGBT

 · 96 Hits • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications...
Infineon Technologies

K75T60 - IGBT

 · 72 Hits Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjma...
ON Semiconductor

NGTG25N120FL2WG - IGBT

 · 66 Hits a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both lo...
Infineon

K50EEH5 - High-speed5 IGBT

 · 65 Hits andBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •Plugandplayreplacemento...
Infineon

H40T60 - IGBT

 · 64 Hits • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technolog...
Infineon

H30R1353 - IGBT

 · 61 Hits •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftc...
Renesas

RJP30H2A - Silicon N-Channel IGBT

 · 60 Hits  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ  High speed switching: tf...
Infineon Technologies

K10T60 - IGBT

 · 59 Hits E PG-TO-220-3-1 Type IKP10N60T PG-TO-220-3-1 Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°...
EGmicro

EG1181 - Power MOS tube / IGBT gate driver

 · 59 Hits 4 4.2. ....
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