.
Silan
40N60NPFD - 600V FIELD STOP IGBT
SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu.
ETC
30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
Fairchild Semiconductor
FGD4536 - 360V PDP IGBT
FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5.
Infineon Technologies
K75T60 - IGBT
IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.
Xiner
SP25N135T - Trench-FS IGBT
Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features Advanced Trench+FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typ.
Fairchild Semiconductor
G40N60 - Ultrafast IGBT
SGH40N60UFD SGH40N60UFD Ultra-Fast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low .
MagnaChip
MBQ60T65PES - High Speed Fieldstop Trench IGBT
MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th.
Silan Microelectronics
60N60FD1 - 600V FIELD-STOP IGBT
Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog.
Toshiba
50JR22 - Silicon N-Channel IGBT
Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The pr.
Agilent
HCPL-3120 - Agilent 2.5 Amp Output Current IGBT Gate Drive Optocoupler
www.DataSheet4U.com Agilent 2.5 Amp Output Current IGBT Gate Drive Optocoupler Data Sheet HCPL-3120 HCPL-J312 HCNW3120 Functional Diagram N/C 1 AN.
Huajing Microelectronics
BT40T60ANFU - Silicon FS Trench IGBT
Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I.
Infineon
H20R1203 - Reverse conducting IGBT
ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3 Datasheet IndustrialPowerControl IHW20N120R3 ResonantSw.
Infineon
K50T60 - IGBT
IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.
Infineon Technologies
H20R1202 - Reverse Conducting IGBT
IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode .
Huajing Microelectronics
BT15T120ANF - Silicon FS Planar IGBT
Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120.
Infineon
K50T60A - IGBT
IKW50N60TA TRENCHSTOPTM Series q Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Co.
Infineon Technologies
K75EEH5 - High speed 5 IGBT
IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKZ75N65EH5 650VDuoPackIGBTanddiode Hig.
Xiner
XNS15N120T - Trench-FS IGBT
Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features Advanced Trench+FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, ty.
IXYS
30N60 - High speed IGBT
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.
Mitsubishi
SLIMDIP-L - DIPIPM RC-IGBT inverter bridge
< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS RC-IGBT inverter bridge for three phase DC-to-AC power.
