IRGB4045DPbF - INSULATED GATE BIPOLAR TRANSISTOR
IRGB4045DPbF Features
* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175 °C
* 5µs SCSOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (on) Temperature Coefficient.
* Ultra Fast Soft Recovery Co
