IRGB4045DPbF Datasheet - International Rectifier

IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR

IRGB4045DPbF Features

* Low VCE (on) Trench IGBT Technology

* Low Switching Losses

* Maximum Junction temperature 175 °C

* 5µs SCSOA

* Square RBSOA

* 100% of the parts tested for ILM

* Positive VCE (on) Temperature Coefficient.

* Ultra Fast Soft Recovery Co

Datasheet Details

IRGB4045DPbF

International Rectifier

378.71 KB

Insulated gate bipolar transistor.

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