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IRGB4045DPbF Datasheet - International Rectifier

IRGB4045DPbF, INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .
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IRGB4045DPbF-InternationalRectifier.pdf

Preview of IRGB4045DPbF PDF

Datasheet Details

Part number:

IRGB4045DPbF

Manufacturer:

International Rectifier

File Size:

378.71 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175 °C
* 5µs SCSOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (on) Temperature Coefficient.
* Ultra Fast Soft Recovery Co

Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
* Low EMI PD - 97269A IRGB4045DPbF C G E n-channel C VCES =

IRGB4045DPbF Distributors

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