IRGB4059DPbF Datasheet, Transistor, International Rectifier

IRGB4059DPbF Features

• Transistor
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of T

PDF File Details

Part number:

IRGB4059DPbF

Manufacturer:

International Rectifier

File Size:

286.93kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

IRGB4059DPbF Application

• Applications
• Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
• Rugged Transient Pe

TAGS

IRGB4059DPbF

International Rectifier

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