Datasheet4U Logo Datasheet4U.com

IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR

IRGB4059DPbF Description

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGB4059DPbF Features

* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175 °C
* 5µs SCSOA
* Square RBSOA
* 100% of The Parts Tested for 4X Rated Current (ILM)
* Positive VCE (on) Temperature Coefficient.
* Ultra Fas

IRGB4059DPbF Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
* Low EMI Absolute Maximum Ratings Parameter VCES IC@ TC = 2

📥 Download Datasheet

Preview of IRGB4059DPbF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGB4059DPbF-like datasheet