* E n-channel G Gate E GC IRGS4640DPbF D2Pak GCE E C GCE G GCE IRGSL4640DPbF IRGB4640DPbF IRGP4640DPbF IRGP4640D-EPbF TO-262Pak TO-220AC TO-247AC TO-247AD C Collector E Emitter Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Squ
IRGB4640DPbF Datasheet (752.59 KB)
IRGB4640DPbF
752.59 KB
Insulated gate bipolar transistor.
VCES = 600V IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C IC = 40A.
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