Datasheet4U Logo Datasheet4U.com

IRGB4630DPbF Datasheet - International Rectifier

IRGB4630DPbF Insulated Gate Bipolar Transistor

IRGB4630DPbF Features

* G Gate C Collector Benefits E Emitter Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) t

IRGB4630DPbF Datasheet (1.20 MB)

Preview of IRGB4630DPbF PDF
IRGB4630DPbF Datasheet Preview Page 2 IRGB4630DPbF Datasheet Preview Page 3

Datasheet Details

Part number:

IRGB4630DPbF

Manufacturer:

International Rectifier

File Size:

1.20 MB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

IRGB4630DPbF IGBT (Infineon)

IRGB4607DPbF Insulated Gate Bipolar Transistor (International Rectifier)

IRGB4610DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB4615DPBF Power MOSFET (International Rectifier)

IRGB4620DPBF Power MOSFET (International Rectifier)

IRGB4620DPbF IGBT (Infineon)

IRGB4640DPbF Insulated Gate Bipolar Transistor (Infineon)

IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

TAGS

IRGB4630DPbF Insulated Gate Bipolar Transistor International Rectifier

IRGB4630DPbF Distributor