Part number:
IRGB4630DPbF
Manufacturer:
International Rectifier
File Size:
1.20 MB
Description:
Insulated gate bipolar transistor.
IRGB4630DPbF Features
* G Gate C Collector Benefits E Emitter Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) t
IRGB4630DPbF Datasheet (1.20 MB)
Datasheet Details
IRGB4630DPbF
International Rectifier
1.20 MB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRGB4630DPbF IGBT (Infineon)
IRGB4607DPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGB4610DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4615DPBF Power MOSFET (International Rectifier)
IRGB4620DPBF Power MOSFET (International Rectifier)
IRGB4620DPbF IGBT (Infineon)
IRGB4640DPbF Insulated Gate Bipolar Transistor (Infineon)
IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4630DPbF Distributor