IRGB4615DPBF - Power MOSFET
(International Rectifier)
IRGS4615DPbF IRGB4615DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 15A, TC = 100°C
tsc > 5µs, Tjmax = 175.
IRGB4607DPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.0A
IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF
Insulated Gate.
IRGB4620DPBF - Power MOSFET
(International Rectifier)
IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥ .
IRGB4620DPbF - IGBT
(Infineon)
VCES = 600V IC = 20A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.55V @ IC = 12A
Applications • Industrial Motor Drive • Inverters • UPS • W.
IRGB4630DPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 30A, TC =100°C
C C.
IRGB4630DPbF - IGBT
(Infineon)
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A
Applications • Industrial Motor Drive • Inverters • UPS • W.