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IRGB4607DPbF Datasheet - International Rectifier

IRGB4607DPbF Insulated Gate Bipolar Transistor

IRGB4607DPbF Features

* Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter   Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent

IRGB4607DPbF Datasheet (821.57 KB)

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Datasheet Details

Part number:

IRGB4607DPbF

Manufacturer:

International Rectifier

File Size:

821.57 KB

Description:

Insulated gate bipolar transistor.

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IRGB4607DPbF Insulated Gate Bipolar Transistor International Rectifier

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