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IRGB4607DPbF, IRGS4607DPBF Datasheet - International Rectifier

IRGB4607DPbF Insulated Gate Bipolar Transistor

IRGB4607DPbF Features

* Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter   Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent

IRGS4607DPBF-InternationalRectifier.pdf

This datasheet PDF includes multiple part numbers: IRGB4607DPbF, IRGS4607DPBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IRGB4607DPbF, IRGS4607DPBF

Manufacturer:

International Rectifier

File Size:

821.57 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRGB4607DPbF, IRGS4607DPBF.
Please refer to the document for exact specifications by model.

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TAGS

IRGB4607DPbF IRGS4607DPBF Insulated Gate Bipolar Transistor International Rectifier

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