IRGB4615DPBF Features
* Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant Gate Collector Em itter → Benefits High efficiency in a wide range of applications
IRGS4615DPBF-InternationalRectifier.pdf
Datasheet Details
IRGB4615DPBF, IRGS4615DPBF
International Rectifier
332.06 KB
Power mosfet.
This datasheet PDF includes multiple part numbers: IRGB4615DPBF, IRGS4615DPBF.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
IRGB4610DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4607DPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGB4620DPBF Power MOSFET (International Rectifier)
IRGB4620DPbF IGBT (Infineon)
IRGB4630DPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGB4630DPbF IGBT (Infineon)
IRGB4640DPbF Insulated Gate Bipolar Transistor (Infineon)
IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4615DPBF Distributor
