IRGP4630DPbf Datasheet, Igbt, Infineon

IRGP4630DPbf Features

• Igbt Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved rel

PDF File Details

Part number:

IRGP4630DPbf

Manufacturer:

Infineon ↗

File Size:

1.30MB

Download:

📄 Datasheet

Description:

Igbt.

IRGP4630DPbf Application

• Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)P

TAGS

IRGP4630DPbf

Infineon

📁 Related Datasheet

IRGP4630DPbF - Insulated Gate Bipolar Transistor (International Rectifier)
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C C.

IRGP4630D-EPbf - IGBT (Infineon)
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications • Industrial Motor Drive • Inverters • UPS • W.

IRGP4630-EDPbF - Insulated Gate Bipolar Transistor (International Rectifier)
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C C.

IRGP4620D-EPbF - IGBT (Infineon)
VCES = 600V IC = 20A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.55V @ IC = 12A Applications • Industrial Motor Drive • Inverters • UPS • W.

IRGP4640-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V IC = 40A, TC = 100°C C C C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V.

IRGP4640D-EPbF - Insulated Gate Bipolar Transistor (Infineon)
VCES = 600V IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C IC = 40A.

IRGP4640D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
VCES = 600V IC = 40A, TC = 100°C IRGP4640DPbF IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C C tSC 5μ.

IRGP4640DPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
VCES = 600V IC = 40A, TC = 100°C IRGP4640DPbF IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C C tSC 5μ.

IRGP4640PBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V IC = 40A, TC = 100°C C C C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V.

IRGP4650D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4650DPbF IRGP4650D-EPbF VCES = 600V IC = 50A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs,.