IRGP4640D-EPbF Datasheet, Transistor, Infineon

IRGP4640D-EPbF Features

  • Transistor E n-channel G Gate E GC IRGS4640DPbF D2Pak GCE E C GCE G GCE IRGSL4640DPbF IRGB4640DPbF IRGP4640DPbF IRGP4640D-EPbF TO-262Pak TO-220AC TO-247AC TO-247AD C Collector E Emit

PDF File Details

Part number:

IRGP4640D-EPbF

Manufacturer:

Infineon ↗

File Size:

752.59kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor.

Datasheet Preview: IRGP4640D-EPbF 📥 Download PDF (752.59kb)
Page 2 of IRGP4640D-EPbF Page 3 of IRGP4640D-EPbF

IRGP4640D-EPbF Application

  • Applications
  • Industrial Motor Drive
  • Inverters
  • UPS
  • Welding Features E n-channel G Gate E GC IRGS4640DPbF D2

TAGS

IRGP4640D-EPbF
Insulated
Gate
Bipolar
Transistor
Infineon

📁 Related Datasheet

IRGP4640D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
VCES = 600V IC = 40A, TC = 100°C IRGP4640DPbF IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C C tSC 5μ.

IRGP4640DPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
VCES = 600V IC = 40A, TC = 100°C IRGP4640DPbF IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C C tSC 5μ.

IRGP4640-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V IC = 40A, TC = 100°C C C C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V.

IRGP4640PBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V IC = 40A, TC = 100°C C C C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V.

IRGP4620D-EPbF - IGBT (Infineon)
VCES = 600V IC = 20A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.55V @ IC = 12A Applications • Industrial Motor Drive • Inverters • UPS • W.

IRGP4630-EDPbF - Insulated Gate Bipolar Transistor (International Rectifier)
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C C.

IRGP4630D-EPbf - IGBT (Infineon)
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications • Industrial Motor Drive • Inverters • UPS • W.

IRGP4630DPbF - Insulated Gate Bipolar Transistor (International Rectifier)
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C C.

IRGP4630DPbf - IGBT (Infineon)
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications • Industrial Motor Drive • Inverters • UPS • W.

IRGP4650D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4650DPbF IRGP4650D-EPbF VCES = 600V IC = 50A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs,.

Stock and price

Infineon Technologies AG
IGBT 600V 65A TO-247AC
DigiKey
IRGP4640D-EPBF
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts