* Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard s
IRGP4650D-EPBF Datasheet (344.30 KB)
IRGP4650D-EPBF
International Rectifier
344.30 KB
Insulated gate bipolar transistor.
IRGP4650DPbF IRGP4650D-EPbF
VCES = 600V IC = 50A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
CC
C
tSC ≥ 5μs,.
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