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IRGP4630-EDPbF

Insulated Gate Bipolar Transistor

IRGP4630-EDPbF Features

* G Gate C Collector Benefits E Emitter Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) t

IRGP4630-EDPbF Datasheet (1.20 MB)

Preview of IRGP4630-EDPbF PDF

Datasheet Details

Part number:

IRGP4630-EDPbF

Manufacturer:

International Rectifier

File Size:

1.20 MB

Description:

Insulated gate bipolar transistor.
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C C.

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TAGS

IRGP4630-EDPbF Insulated Gate Bipolar Transistor International Rectifier

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