* Low V CE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5µs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard
IRGP4640-EPBF Datasheet (425.49 KB)
IRGP4640-EPBF
International Rectifier
425.49 KB
Insulated gate bipolar transistor.
IRGP4640PbF IRGP4640-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
VCES = 600V IC = 40A, TC = 100°C
C
C
C
tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V.
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