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IRGP4640PBF

INSULATED GATE BIPOLAR TRANSISTOR

IRGP4640PBF Features

* Low V CE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5µs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard

IRGP4640PBF Datasheet (425.49 KB)

Preview of IRGP4640PBF PDF

Datasheet Details

Part number:

IRGP4640PBF

Manufacturer:

International Rectifier

File Size:

425.49 KB

Description:

Insulated gate bipolar transistor.
IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V IC = 40A, TC = 100°C C C C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V.

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IRGP4640PBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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