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IRGP4650DPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRGP4650DPBF Features

* Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard s

IRGP4650DPBF Datasheet (344.30 KB)

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Datasheet Details

Part number:

IRGP4650DPBF

Manufacturer:

International Rectifier

File Size:

344.30 KB

Description:

Insulated gate bipolar transistor.
IRGP4650DPbF IRGP4650D-EPbF VCES = 600V IC = 50A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs,.

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IRGP4650DPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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