Part number:
IRGP4630D-EPbf
Manufacturer:
File Size:
1.30 MB
Description:
Igbt.
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A
Applications
* Industrial Motor Drive
* Inv.
* Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coeffici
IRGP4630D-EPbf Datasheet (1.30 MB)
IRGP4630D-EPbf
1.30 MB
Igbt.
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A
Applications
* Industrial Motor Drive
* Inv.
📁 Related Datasheet
IRGP4630DPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGP4630DPbf IGBT (Infineon)
IRGP4630-EDPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGP4620D-EPbF IGBT (Infineon)
IRGP4640-EPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4640D-EPbF Insulated Gate Bipolar Transistor (Infineon)
IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4640DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4640PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4650D-EPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)