IRGIB4620DPbF Datasheet - Infineon

IRGIB4620DPbF IGBT

VCES = 600V IC = 20A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.55V @ IC = 12A Applications Industrial Motor Drive Inverters UPS Welding IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C E C G IRGB4620DPbF TO-220AB C GC E IRGP4620DPbF TO-247AC GCE IRGP4620D-EPbF TO-247AD C G E n-channel G Gate GC E IRGIB4620DPbF TO-220AB Full-Pak C Collector GC .

IRGIB4620DPbF Features

* Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coeffici

IRGIB4620DPbF Datasheet (966.15 KB)