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IRGIB10B60KD1P Datasheet - International Rectifier

IRGIB10B60KD1P-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGIB10B60KD1P

Manufacturer:

International Rectifier

File Size:

394.00 KB

Description:

Insulated gate bipolar transistor.

IRGIB10B60KD1P, INSULATED GATE BIPOLAR TRANSISTOR

IRGIB10B60KD1P Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10μs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Maximum Junction Temperature R

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📌 All Tags

IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
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