IRGIB10B60KD1P Datasheet - International Rectifier

IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR

IRGIB10B60KD1P Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10μs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Maximum Junction Temperature R

Datasheet Details

IRGIB10B60KD1P

International Rectifier

394.00 KB

Insulated gate bipolar transistor.

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