Part number:
IRGIB10B60KD1P
Manufacturer:
International Rectifier
File Size:
394.00 KB
Description:
Insulated gate bipolar transistor.
IRGIB10B60KD1P Datasheet (394.00 KB)
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10μs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature R
IRGIB10B60KD1P Datasheet (394.00 KB)
IRGIB10B60KD1P
International Rectifier
394.00 KB
Insulated gate bipolar transistor.
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