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IRGIB10B60KD1PBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number: IRGIB10B60KD1PBF
Manufacturer: International Rectifier
File Size: 511.05 KB
Datasheet: IRGIB10B60KD1PBF_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

IRGIB10B60KD1PBF Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature Rated at 175°C.
Lead-Free C VCES = 600V IC = 10A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.7V Benefits.
Benchmark Efficiency for Motor Control.
Rug.

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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