IRGIB10B60KD1PBF Datasheet - International Rectifier

IRGIB10B60KD1PBF, INSULATED GATE BIPOLAR TRANSISTOR

www.DataSheet.co.kr PD - 94913 IRGIB10B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

datasheet Preview Page 1 from Datasheet4u.com

IRGIB10B60KD1PBF_InternationalRectifier.pdf

IRGIB10B60KD1PBF Datasheet Preview — Preview of IRGIB10B60KD1PBF PDF

Datasheet Details

Part number:

IRGIB10B60KD1PBF

Manufacturer:

International Rectifier

File Size:

511.05 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature R

IRGIB10B60KD1PBF Distributors

📁 Related Datasheet

IRGIB4620DPbF IRGIB4630DPbF IRG4BC20F IRG4BC20FD IRG4BC20FD-S IRG4BC20K

📌 All Tags

IRGIB10B60KD1PBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGIB10B60KD1PBF-like datasheet