IRGIB10B60KD1PBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Maximum Junction Temperature R

IRGIB10B60KD1PBF

International Rectifier

511.05 KB

Insulated gate bipolar transistor.

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