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IRGIB10B60KD1PBF Datasheet - International Rectifier

IRGIB10B60KD1PBF_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGIB10B60KD1PBF

Manufacturer:

International Rectifier

File Size:

511.05 KB

Description:

Insulated gate bipolar transistor.

IRGIB10B60KD1PBF, INSULATED GATE BIPOLAR TRANSISTOR

IRGIB10B60KD1PBF Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Maximum Junction Temperature R

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📌 All Tags

IRGIB10B60KD1PBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
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