IRGIB15B60KD1 Datasheet, Transistor, International Rectifier

✔ IRGIB15B60KD1 Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB15B60KD1

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International Rectifier

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

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IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR International Rectifier