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IRGIB6B60KD Datasheet - International Rectifier

IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR

IRGIB6B60KD Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient. G E C VCES = 600V IC = 6.0A, TC=90°C ts

IRGIB6B60KD_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGIB6B60KD

Manufacturer:

International Rectifier

File Size:

299.48 KB

Description:

Insulated gate bipolar transistor.

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IRGIB6B60KD IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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