Part number:
IRGIB6B60KD
Manufacturer:
International Rectifier
File Size:
299.48 KB
Description:
Insulated gate bipolar transistor.
IRGIB6B60KD Datasheet (299.48 KB)
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E C VCES = 600V IC = 6.0A, TC=90°C ts
IRGIB6B60KD Datasheet (299.48 KB)
IRGIB6B60KD
International Rectifier
299.48 KB
Insulated gate bipolar transistor.
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