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IRGIB6B60KD - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number: IRGIB6B60KD
Manufacturer: International Rectifier
File Size: 299.48 KB
Datasheet: IRGIB6B60KD_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

IRGIB6B60KD Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. G E C VCES = 600V IC = 6.0A, TC=90°C tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sh.

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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