IRGIB6B60KD Datasheet - International Rectifier

IRGIB6B60KD, INSULATED GATE BIPOLAR TRANSISTOR

PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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IRGIB6B60KD_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGIB6B60KD

Manufacturer:

International Rectifier

File Size:

299.48 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E C VCES = 600V IC = 6.0A, TC=90°C ts

IRGIB6B60KD Distributors

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IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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