Part number:
IRGIB15B60KD1P
Manufacturer:
International Rectifier
File Size:
375.78 KB
Description:
Insulated gate bipolar transistor.
IRGIB15B60KD1P Datasheet (375.78 KB)
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature R
IRGIB15B60KD1P Datasheet (375.78 KB)
IRGIB15B60KD1P
International Rectifier
375.78 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB10B60KD1PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB4620DPbF IGBT (Infineon)
IRGIB4630DPbF IGBT (Infineon)
IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB7B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB7B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
