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IRGIB15B60KD1P - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number: IRGIB15B60KD1P
Manufacturer: International Rectifier
File Size: 375.78 KB
Datasheet: IRGIB15B60KD1P-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

IRGIB15B60KD1P Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature Rated at 175°C.
Lead-Free Benefits.
Benchmark Efficiency for Motor Control. G E n-channel.
Rugged Transient Performance.
Low EMI.
Excellent Current Sh.

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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