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IRGIB15B60KD1P Datasheet - International Rectifier

IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR

IRGIB15B60KD1P Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Maximum Junction Temperature R

IRGIB15B60KD1P Datasheet (375.78 KB)

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Datasheet Details

Part number:

IRGIB15B60KD1P

Manufacturer:

International Rectifier

File Size:

375.78 KB

Description:

Insulated gate bipolar transistor.

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IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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