IRGIB6B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGIB6B60KDPBF
Manufacturer	International Rectifier
File Size	280.27 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB6B60KDPBF_InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free. C VCES = 600V IC = 6.0A, TC=90°C G E tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.

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Published: Jun 9, 2007 |