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IRGIB6B60KDPBF Datasheet - International Rectifier

IRGIB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGIB6B60KDPBF Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Lead-Free. C VCES = 600V IC =

IRGIB6B60KDPBF Datasheet (280.27 KB)

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Datasheet Details

Part number:

IRGIB6B60KDPBF

Manufacturer:

International Rectifier

File Size:

280.27 KB

Description:

Insulated gate bipolar transistor.

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IRGIB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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