IRGIB7B60KD - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGIB7B60KD
Manufacturer	International Rectifier
File Size	457.39 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB7B60KD_InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. IRGIB7B60KD C VCES = 600V IC = 8.0A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. VCE(o.

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Published: Jun 9, 2007 |