Datasheet Details
Part number:
IRGIB7B60KD
Manufacturer:
International Rectifier
File Size:
461.51 KB
Description:
Insulated gate bipolar transistor.
IRGIB7B60KD_InternationalRectifier.pdf
IRGIB7B60KD_InternationalRectifier.pdf
Datasheet Details
Part number:
IRGIB7B60KD
Manufacturer:
International Rectifier
File Size:
461.51 KB
Description:
Insulated gate bipolar transistor.
IRGIB7B60KD, INSULATED GATE BIPOLAR TRANSISTOR
IRGIB7B60KD Features
* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. IRGIB7B60KD C VCES = 600V IC = 8.0A, TC=100°C G E tsc > 10µs, TJ=
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