Part number:
IRGIB7B60KD
Manufacturer:
International Rectifier
File Size:
461.51 KB
Description:
Insulated gate bipolar transistor.
IRGIB7B60KD Datasheet (461.51 KB)
Datasheet Details
IRGIB7B60KD Features
* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. IRGIB7B60KD C VCES = 600V IC = 8.0A, TC=100°C G E tsc > 10µs, TJ=
IRGIB7B60KD Datasheet (461.51 KB)
Datasheet Details
IRGIB7B60KD
International Rectifier
461.51 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRGIB7B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB10B60KD1PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGIB4620DPbF IGBT (Infineon)
IRGIB4630DPbF IGBT (Infineon)
IRGIB7B60KD Distributor