Datasheet Specifications
- Part number
- IRGIB7B60KDPBF
- Manufacturer
- International Rectifier
- File Size
- 941.53 KB
- Datasheet
- IRGIB7B60KDPBF_InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
Description
www.DataSheet4U.com PD - 95195 IRGIB7B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .
Features
* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free G E C VCES = 600V IC = 8.0A, TC=100°C tsc > 10µsIRGIB7B60KDPBF Distributors
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