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IRGS4630DPBF

Insulated Gate Bipolar Transistor

IRGS4630DPBF Features

* G Gate C Collector Benefits E Emitter Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) t

IRGS4630DPBF Datasheet (1.20 MB)

Preview of IRGS4630DPBF PDF

Datasheet Details

Part number:

IRGS4630DPBF

Manufacturer:

International Rectifier

File Size:

1.20 MB

Description:

Insulated gate bipolar transistor.
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C C.

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IRGS4630DPBF Insulated Gate Bipolar Transistor International Rectifier

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