IRGS4630DPBF
International Rectifier
1.20MB
Insulated gate bipolar transistor.
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📁 Related Datasheet
IRGS4630DPbF - IGBT
(Infineon)
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A
Applications • Industrial Motor Drive • Inverters • UPS • W.
IRGS4607DPBF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.0A
IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF
Insulated Gate.
IRGS4610DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 10A, TC = 100°C
tsc > 5µs.
IRGS4615DPBF - Power MOSFET
(International Rectifier)
IRGS4615DPbF IRGB4615DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 15A, TC = 100°C
tsc > 5µs, Tjmax = 175.
IRGS4620DPBF - Power MOSFET
(International Rectifier)
IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥ .
IRGS4620DPbF - IGBT
(Infineon)
VCES = 600V IC = 20A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.55V @ IC = 12A
Applications • Industrial Motor Drive • Inverters • UPS • W.
IRGS4640DPbF - Insulated Gate Bipolar Transistor
(Infineon)
VCES = 600V
IRGS4640DPbF IRGSL4640DPbF
IRGB4640DPbF IRGP4640D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
IC = 40A.
IRGS4045DPBF - Insulated Gate Bipolar Transistor
(International Rectifier)
IRGS4045DPbF
VCES = 600V IC 6.0A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
CC
tsc > 5µs, Tjmax = 175°C VCE.
IRGS4055PBF - PDP Trench IGBT
(International Rectifier)
PD - 97058B
PDP TRENCH IGBT
Features Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l L.
IRGS4056DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 96197
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology • Low switching losse.