* Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant Gate Collector Em itter → Benefits High efficiency in a wide range of applications
IRGS4615DPBF Datasheet (332.06 KB)
IRGS4615DPBF
International Rectifier
332.06 KB
Power mosfet.
IRGS4615DPbF IRGB4615DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 15A, TC = 100°C
tsc > 5µs, Tjmax = 175.
📁 Related Datasheet
IRGS4610DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGS4607DPBF Insulated Gate Bipolar Transistor (International Rectifier)
IRGS4620DPBF Power MOSFET (International Rectifier)
IRGS4620DPbF IGBT (Infineon)
IRGS4630DPBF Insulated Gate Bipolar Transistor (International Rectifier)
IRGS4630DPbF IGBT (Infineon)
IRGS4640DPbF Insulated Gate Bipolar Transistor (Infineon)
IRGS4045DPBF Insulated Gate Bipolar Transistor (International Rectifier)
IRGS4055PBF PDP Trench IGBT (International Rectifier)
IRGS4056DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
