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IRGS4620DPBF

Power MOSFET

IRGS4620DPBF Features

* Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coefficient

IRGS4620DPBF Datasheet (723.54 KB)

Preview of IRGS4620DPBF PDF

Datasheet Details

Part number:

IRGS4620DPBF

Manufacturer:

International Rectifier

File Size:

723.54 KB

Description:

Power mosfet.
IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥ .

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IRGS4620DPBF Power MOSFET International Rectifier

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