IRGS4055PBF
International Rectifier
794.66kb
Pdp trench igbt. This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to
TAGS
📁 Related Datasheet
IRGS4056DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 96197
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology • Low switching losse.
IRGS4045DPBF - Insulated Gate Bipolar Transistor
(International Rectifier)
IRGS4045DPbF
VCES = 600V IC 6.0A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
CC
tsc > 5µs, Tjmax = 175°C VCE.
IRGS4062DPBF - Power MOSFET
(International Rectifier)
PD - 97355B
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low.
IRGS4064DPBF - Power MOSFET
(International Rectifier)
PD - 96424
IRGS4064DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• • • • • • • • • • Low VCE (on) Trench IGBT Te.
IRGS4065PBF - IGBT
(International Rectifier)
..
PD - 97059B
PDP TRENCH IGBT
Features Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP.
IRGS4086PbF - PDP Trench IGBT
(International Rectifier)
PD - 96222
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l .
IRGS4607DPBF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.0A
IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF
Insulated Gate.
IRGS4610DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 10A, TC = 100°C
tsc > 5µs.
IRGS4615DPBF - Power MOSFET
(International Rectifier)
IRGS4615DPbF IRGB4615DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 15A, TC = 100°C
tsc > 5µs, Tjmax = 175.
IRGS4620DPBF - Power MOSFET
(International Rectifier)
IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥ .