.
H&M Semiconductor
A1SHB - P-Channel Trench Power MOSFET
HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge.
Thinki Semiconductor
IRF3205 - N-Channel Trench Process Power MOSFET Transistor
IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F.
Thinki Semiconductor
IRFZ44 - N-Channel Trench Power MOSFET
IRFZ44 ® Pb Free Plating Product IRFZ44 Pb 45 Ampere Typical N-Channel Trench Power MOSFETs General Description The IRFZ44 is N-channel MOS Fiel.
MagnaChip
MBQ60T65PES - High Speed Fieldstop Trench IGBT
MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th.
Xiner
SP25N135T - Trench-FS IGBT
Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features Advanced Trench+FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typ.
Huajing Microelectronics
BT40T60ANFU - Silicon FS Trench IGBT
Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I.
MagnaChip
MDU1512 - N-Channel Trench MOSFET
MDU1512 – Single N-Channel Trench MOSFET 30V MDU1512 Single N-channel Trench MOSFET 30V, 100.0A, 3.4mΩ General Description The MDU1512 uses advanced.
NCE Power Semiconductor
NCEP15T14 - N-Channel Super Trench Power MOSFET
http://www.ncepower.com Pb Free Product NCEP15T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology tha.
Fairchild Semiconductor
FGPF4633 - PDP Trench IGBT
FGPF4633 — 330 V PDP Trench IGBT FGPF4633 330 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.55 V @ IC =.
CASS
CS4459 - P-Channel Trench Power MOSFET
P-Channel Trench Power MOSFET General Description The CS4459 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operati.
Xiner
XNF20N60T - Trench-FS IGBT
Xiner XNF20N60T 600V，20A，Trench-FS IGBT Features Advanced Trench+FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typi.
TRinno
TGPF30N43P - Field Stop Trench IGBT
TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati.
NCE Power Semiconductor
NCEP1520K - N-Channel Super Trench Power MOSFET
http://www.ncepower.com Pb Free Product NCEP1520K NCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology tha.
Fairchild Semiconductor
FGPF4536 - 360V PDP Trench IGBT
FGPF4536 — 360 V PDP Trench IGBT FGPF4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE (sat) =1.59 V @ IC =.
TRinno
TGAN40N60F2DS - Field Stop Trench IGBT
Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel.
TRinno
TGAN40N60FD - Field Stop Trench IGBT
Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation.
TRinno
TGAN60N60FD - Field Stop Trench IGBT
Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
NCE Power Semiconductor
NCEP023N10LL - N-Channel Super Trench II Power MOSFET
NCEP023N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized.
Xiner
XNS15N120T - Trench-FS IGBT
Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features Advanced Trench+FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, ty.
MagnaChip
MDV1528 - N-Channel Trench MOSFET
MDV1528 – Single N-Channel Trench MOSFET 30V MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8mΩ General Description The MDV1528 uses advanced M.
