Trench Datasheet | Specifications & PDF Download

HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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MDU1511 – Single N-Channel Trench MOSFET 30V ㅊ MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ General Description The MDU1511 uses advanc

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http://www.ncepower.com Pb Free Product NCEP85T25 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25 uses Super Trench technology tha

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UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ

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NCEP023N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized

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FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ Features General Description „ M

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IRFZ44 ® Pb Free Plating Product IRFZ44 Pb 45 Ampere Typical N-Channel Trench Power MOSFETs General Description The IRFZ44 is N-channel MOS Fiel

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FDMS7650DC N-Channel Dual CoolTM 56 PowerTrench® MOSFET July 2015 FDMS7650DC N-Channel Dual CoolTM 56 PowerTrench® MOSFET 30 V, 100 A, 0.99 mΩ Feat

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FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM 25 V, 40 A, 3.5 mΩ October 2010 F

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http://www.ncepower.com Pb Free Product NCEP12T15 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T15 uses Super Trench technology tha

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FDD5614P March 2015 FDD5614P 60V P-Channel PowerTrench® MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTre

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FDD6680S December 2000 FDD6680S 30V N-Channel PowerTrench SyncFET™ General Description The FDD6680S is designed to replace a single MOSFET and Scho

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FDS6690S May 2000 PRELIMINARY FDS6690S 30V N -Channel PowerTrench® SyncFET™ General Description The FDS6690S is designed to replace a single SO-8 MO

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CP10H100S 10A Surface Mount Trench Schottky Rectifier ■ Features • Low forward voltage drop. • Excellent high temperature stability. • Fast switching

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www.DataSheet4U.com FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ Features

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FGPF4633 — 330 V PDP Trench IGBT FGPF4633 330 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.55 V @ IC =

Rating: 1 ★ (7 votes)