Trench Datasheet | Specifications & PDF Download

HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

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Trench Schottky Barrier Rectifiers 30SQ050 R-6 Reverse Voltage - 50V Forward Current - 30A FEATURES The plastic package carries Underwriters Laborat

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N-Channel Trench Power MOSFET General Description The D444 combines advanced trench MOSFET technology with a low resistance package to provide extreme

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NCEP023N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized

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IRFZ44 ® Pb Free Plating Product IRFZ44 Pb 45 Ampere Typical N-Channel Trench Power MOSFETs General Description The IRFZ44 is N-channel MOS Fiel

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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http://www.ncepower.com Pb Free Product NCEP1520K NCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology tha

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http://www.ncepower.com Pb Free Product NCEP85T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology tha

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, ty

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http://www.ncepower.com Pb Free Product NCEP15T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology tha

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEATURES • ’Trench’ technology • Low on-state resista

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TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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N-Channel Trench Power MOSFET General Description The CS50N06 combines advanced trench MOSFET technology with a low resistance package to provide extr

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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