Trench Datasheet | Specifications & PDF Download

HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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Silicon FS Trench IGBT CRG40T120AK5HDZ General Description： Using owner proprietary trench design and advanced Field Stop (FS) technology, offering s

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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CSD30N55 N-Channel Trench Power MOSFET General Description The CSD30N55 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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IRFZ44 ® Pb Free Plating Product IRFZ44 Pb 45 Ampere Typical N-Channel Trench Power MOSFETs General Description The IRFZ44 is N-channel MOS Fiel

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GFMK3045 Trench SCHOTTKY Diodes ■ Features ● ， Low VF，low IR ● ， Low Power loss, High efficiency ● （ESD>=30KV） :IEC-61000-4-2， High ESD（ESD>=30

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Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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New Product V30100C, VF30100C, VB30100C & VI30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF

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FKV550N FKV550N 3.3 10.0 2.8 4.2 C 0.5 16.9 8.4 0.8 4.0 2.6 1.35 3.9 1.35 0.85 2.54 2.54 0.45 2.4 2.2 FKV550N – – – – – – – – –

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TO-247-3L NGW40T65M3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 28 June 2024 Product data sheet 1. General Desc

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http://www.ncepower.com Pb Free Product NCEP85T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology tha

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N-Channel Trench Power MOSFET General Description The 48N75 is N-channel MOS Field Effect Transistor designed for high current switching applications.

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PD - 97562 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l

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Elektronische Bauelemente SBL20U200 Voltage 200V 20.0 Amp Low VF Trench Barrier Schottky Rectifier RoHS Compliant Product A suffix of “-C” specifies

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R TRENCH SCHOTTKY BARRIER DIODE TPA4050S-2 MAIN CHARACTERISTICS IF(AV) VRRM TJmax IFSM VF(max)@20A 40A 50 V 200 ℃ 450 A 0.46V （@Tj=125℃） Pac

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PbFreeProduct NCE60TD60BP,NCE60TD60BT 600V, 60A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (F

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Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, ty

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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