Datasheet4U Logo Datasheet4U.com

MBQ60T65PES - High Speed Fieldstop Trench IGBT

Datasheet Summary

Description

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT 2nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also it is high ruggedness and excellent quality for solar inverter, UPS, IH, welder and PFC application where low conduction

Features

  • High Speed Switching & Low Power Loss.
  • VCE(sat) = 1.85V @ IC = 60A.
  • Eoff = 0.53mJ @ TC = 25°C.
  • High Input Impedance.
  • trr = 110ns (typ. ) @diF/dt = 500A/ μs.
  • Maximum Junction Temperature 175°C.

📥 Download Datasheet

Datasheet preview – MBQ60T65PES

Datasheet Details

Part number MBQ60T65PES
Manufacturer MagnaChip
File Size 729.89 KB
Description High Speed Fieldstop Trench IGBT
Datasheet download datasheet MBQ60T65PES Datasheet
Additional preview pages of the MBQ60T65PES datasheet.

📁 Similar Datasheet

Other Datasheets by MagnaChip

Full PDF Text Transcription

Click to expand full text
MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT 2nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also it is high ruggedness and excellent quality for solar inverter, UPS, IH, welder and PFC application where low conduction losses are essential Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.85V @ IC = 60A  Eoff = 0.53mJ @ TC = 25°C  High Input Impedance  trr = 110ns (typ.
Published: |