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MBQ40T65FDSC - 650V Field Stop IGBT

Description

This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality.

This device is for PFC, UPS & Inverter applications.

Features

  • High Speed Switching & Low Power Loss.
  • VCE(sat) = 1.95V @ IC = 40A.
  • Eoff = 0.35mJ @ TC = 25°C.
  • High Input Impedance.
  • trr = 80ns (typ. ) @diF/dt = 1000A/ μs.
  • Maximum junction temperature 175°C.

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Datasheet preview – MBQ40T65FDSC

Datasheet Details

Part number MBQ40T65FDSC
Manufacturer MagnaChip
File Size 1.56 MB
Description 650V Field Stop IGBT
Datasheet download datasheet MBQ40T65FDSC Datasheet
Additional preview pages of the MBQ40T65FDSC datasheet.

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Full PDF Text Transcription

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General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 MBQ40T65FDSC 650V Field Stop IGBT Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.95V @ IC = 40A  Eoff = 0.35mJ @ TC = 25°C  High Input Impedance  trr = 80ns (typ.
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