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MBQ40T65FDSC - 650V Field Stop IGBT

General Description

This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality.

This device is for PFC, UPS & Inverter applications.

Key Features

  • High Speed Switching & Low Power Loss.
  • VCE(sat) = 1.95V @ IC = 40A.
  • Eoff = 0.35mJ @ TC = 25°C.
  • High Input Impedance.
  • trr = 80ns (typ. ) @diF/dt = 1000A/ μs.
  • Maximum junction temperature 175°C.

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Datasheet Details

Part number MBQ40T65FDSC
Manufacturer MagnaChip
File Size 1.56 MB
Description 650V Field Stop IGBT
Datasheet download datasheet MBQ40T65FDSC Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 MBQ40T65FDSC 650V Field Stop IGBT Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.95V @ IC = 40A  Eoff = 0.35mJ @ TC = 25°C  High Input Impedance  trr = 80ns (typ.