MBQ40T65QES - IGBT

Description

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching speed and excellent quality.

Features

High Speed Switching & Low Power Loss.
VCE(sat) = 1.8V @ IC = 40A.
Maximum junction temperature 175°C.

MagnaChip

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Datasheet Details

Part number	MBQ40T65QES
Manufacturer	MagnaChip
File Size	711.85 KB
Description	IGBT
Datasheet	MBQ40T65QES Datasheet
Additional preview pages of the MBQ40T65QES datasheet.

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Full PDF Text Transcription

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MBQ40T65QES 650V Field Stop IGBT General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching speed and excellent quality. MBQ40T65QES 650V Field Stop IGBT Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.

Published: Jan 11, 2022 |