MBQ40T120QESTH Description
This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications.
MBQ40T120QESTH Key Features
- High Speed Switching & Low Power Loss
- VCE(sat) = 2.1V @ IC = 40A
- High Input Impedance
- trr = 285ns (typ.)
- Ultra-Soft, fast recovery anti-parallel diode
- Ultra-narrowed VF distribution control
- Positive Temperature coefficient for easy paralleling
- G : Gate
- C : Collector
- E : Emitter