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MBQ40T120QESTH Datasheet IGBT

Manufacturer: MagnaChip

Overview: MBQ40T120QESTH High Speed 1200V Field Stop Trench IGBT MBQ40T120QESTH High speed FieldStop Trench IGBT.

General Description

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality.

This device is for PFC, UPS & Inverter applications.

Applications  Welder

Key Features

  • High Speed Switching & Low Power Loss.
  • VCE(sat) = 2.1V @ IC = 40A.
  • High Input Impedance.
  • trr = 285ns (typ. ).
  • Ultra-Soft, fast recovery anti-parallel diode.
  • Ultra-narrowed VF distribution control.
  • Positive Temperature coefficient for easy paralleling TO-247.
  • G : Gate.
  • C : Collector.
  • E : Emitter GC E Absolute Maximum Ratings Package outline and symbol Characteristics Collector-emitter voltage Gate-emitter voltage DC collector current, limited.

MBQ40T120QESTH Distributor