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MBQ25T120FESC Datasheet IGBT

Manufacturer: MagnaChip

MBQ25T120FESC Overview

This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & PV inverter and Welder

MBQ25T120FESC Key Features

  • High Speed Switching & Low VCE(sat) Loss - VCE(sat) = 2.0V @IC = 25A - High Input Impedance - trr = 100ns (typ.) @ diF/d
  • Ultra Narrowed VF distribution control
  • Positive Temperature coefficient for easy paralleling

MBQ25T120FESC Applications

  • PFC - UPS
  • Welder - PV Inverter
  • High Speed Switching & Low VCE(sat) Loss - VCE(sat) = 2.0V @IC = 25A - High Input Impedance - trr = 100ns (typ.) @ diF/d
  • Ultra Narrowed VF distribution control
  • Positive Temperature coefficient for easy paralleling

MBQ25T120FESC Distributor