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MBQ25T120FESC - IGBT

General Description

This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality.

This device is for PFC, UPS & PV inverter and Welder Applications.

PFC UPS Welder PV Inverter F

Key Features

  • High Speed Switching & Low VCE(sat) Loss.
  • VCE(sat) = 2.0V @IC = 25A.
  • High Input Impedance.
  • trr = 100ns (typ. ) @ diF/dt = 500A/ μs.
  • Maximum junction temperature 175°C.
  • Pb-free ; RoHS compliant.
  • Ultra Soft, fast recovery anti-parallel diode.
  • Ultra Narrowed VF distribution control.
  • Positive Temperature coefficient for easy paralleling TO-247 G C E Maximum Rating Parameter Collector-emitter voltage DC collector current, limited by Tvjmax TC=25°C T.

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Datasheet Details

Part number MBQ25T120FESC
Manufacturer MagnaChip
File Size 1.39 MB
Description IGBT
Datasheet download datasheet MBQ25T120FESC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBQ25T120FESC 1200V Fieldstop Trench IGBT MBQ25T120FESC High speed Fieldstop Trench IGBT General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & PV inverter and Welder Applications. Applications  PFC  UPS  Welder  PV Inverter Features  High Speed Switching & Low VCE(sat) Loss  VCE(sat) = 2.0V @IC = 25A  High Input Impedance  trr = 100ns (typ.