MBQ25T120FESC Overview
This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & PV inverter and Welder
MBQ25T120FESC Key Features
- High Speed Switching & Low VCE(sat) Loss - VCE(sat) = 2.0V @IC = 25A - High Input Impedance - trr = 100ns (typ.) @ diF/d
- Ultra Narrowed VF distribution control
- Positive Temperature coefficient for easy paralleling
MBQ25T120FESC Applications
- PFC - UPS
- Welder - PV Inverter
- High Speed Switching & Low VCE(sat) Loss - VCE(sat) = 2.0V @IC = 25A - High Input Impedance - trr = 100ns (typ.) @ diF/d
- Ultra Narrowed VF distribution control
- Positive Temperature coefficient for easy paralleling