MBQ25T120FESC Description
This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & PV inverter and Welder Applications. Applications PFC UPS Welder PV Inverter.
MBQ25T120FESC Key Features
- High Speed Switching & Low VCE(sat) Loss
- VCE(sat) = 2.0V @IC = 25A
- High Input Impedance
- trr = 100ns (typ.) @ diF/dt = 500A/ μs
- Maximum junction temperature 175°C
- Pb-free ; RoHS pliant
- Ultra Soft, fast recovery anti-parallel diode
- Ultra Narrowed VF distribution control
- Positive Temperature coefficient for easy paralleling