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NCEP023N10LL - N-Channel Super Trench II Power MOSFET

Datasheet Summary

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =100V,ID =300A RDS(ON)=1.7mΩ , typical@ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TOLL Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP023N10LL NCEP023N10LL TOLL - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Drai.

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Datasheet Details

Part number NCEP023N10LL
Manufacturer NCE Power Semiconductor
File Size 405.43 KB
Description N-Channel Super Trench II Power MOSFET
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NCEP023N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =100V,ID =300A RDS(ON)=1.
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