NCEP023N10T Datasheet | NCE Power Semiconductor

NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification General Features - VDS =100V,ID =280A RDS(ON)=1.85mΩ , typical@ VGS=10V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature -...