NCEP023N10T - N-Channel Power MOSFET

Product Overview

NCE Power Semiconductor

Datasheet Details

Part number	NCEP023N10T
Manufacturer	NCE Power Semiconductor
File Size	547.00 KB
Description	N-Channel Power MOSFET
Datasheet	NCEP023N10T Datasheet
Additional preview pages of the NCEP023N10T datasheet.

Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =100V,ID =280A RDS(ON)=1.85mΩ , typical@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP023N10T NCEP023N10T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol.

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Published: Sep 8, 2024 |