Datasheet Summary
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Pb Free Plating Product
Pb
N-Channel Trench Process Power MOSFET Transistor
General Description
The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .
Features
- VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
Application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
- Inverter Application
G DS TO-220CB Top View
Schematic Diagram
VDS = 55 V ID = 105 A
RDS(ON) = 5.0 mΩ
Table 1....
