Thinki Semiconductor IRF3205
The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | IRF3205 |
|---|---|
| Datasheet | IRF3205 Download |
| Manufacturer |  Thinki Semiconductor |
| Description | N-Channel Trench Process Power MOSFET Transistor |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .FEATURES
● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
● Inverter Application G DS TO-220CB Top View Schematic Diagram VDS = 55 V ID = 105 A RDS(ON) = 5.0 mΩ Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximum Power Dissipation(Tc=25℃) Derating Factor EAS Single Pulse Avalanche Energy (Note 2) TJ,TSTG Operating Junction and Storage Temperature Range Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS...
