IRF3205LPBF Datasheet | International Rectifier

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3205L) is available for low-profile applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB mounted, steady-state)- .irf. - 95106 IRF3205SPb F IRF3205LPb F HEXFET® Power MOSFET VDSS = 55V RDS(on) = 8.0mΩ ID = 110A… D2Pak TO-262 IRF3205SPb F IRF3205LPb F Max. 110 … 80 390 200 1.3 ± 20 62 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Typ. - - - - - - Max. 0.75 40 Units W W/°C V A m J V/ns °C Units °C/W 1 03/11/04 IRF3205S/LPb F Electrical Characteristics @ TJ = 25°C (unless otherwise...