| Part Number | IRF3205 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF3205， IIRF3205
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·.
*Static drain-source on-resistance: RDS(on) ≤8.0mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=. |
IRF3205 Datasheet and Specifications PDF
The IRF3205 is a N-Channel MOSFET Transistor.
| Part Number | IRF3205 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi.
ous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt * Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32. |
| Part Number | IRF3205 Datasheet |
|---|---|
| Description | N-Channel Trench Process Power MOSFET Transistor |
| Manufacturer | Thinki Semiconductor |
| Overview |
The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .
Features
● VDS=.
* VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V * Ultra Low On-Resistance * High UIS and UIS 100% Test Application * Hard Switched and High Frequency Circuits * Uninterruptible Power Supply * Inverter Application G DS TO-220CB Top View Schematic Diagram VDS = 55 V ID = 105 A RDS(ON) = 5.0 mΩ. |
| Part Number | IRF3205 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Nell Power Semiconductor |
| Overview | The Nell IRF3205 is a three-terminal silicon device with current conduction capability of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. threshold volta. RDS(ON) = 0.010Ω @ VGS = 10V Ultra low gate charge(150nC max.) Low reverse transfer capacitance (C RSS = 210pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF3205H) D (Drain) PRODUCT SUMMARY ID (A) ID (A),. |