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A1SHB

Manufacturer: H&M Semiconductor

A1SHB datasheet by H&M Semiconductor.

A1SHB datasheet preview

A1SHB Datasheet Details

Part number A1SHB
Datasheet A1SHB-HMSemiconductor.pdf
File Size 803.79 KB
Manufacturer H&M Semiconductor
Description P-Channel Trench Power MOSFET
A1SHB page 2 A1SHB page 3

A1SHB Overview

The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

A1SHB Key Features

  • VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

A1SHB from other manufacturers

View A1SHB datasheet index

Brand Logo Part Number Description Other Manufacturers
YANGJING Logo A1SHB P-Channel MOSFET YANGJING
Bruckewell Logo A1SHB P-Channel Enhancement Mode Power MOSFET Bruckewell
Vanguard Semiconductor Logo A1SHB P-Channel Advanced Power MOSFET Vanguard Semiconductor
Kexin Logo A1SHB P-Channel MOSFET Kexin
H&M Semiconductor logo - Manufacturer

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