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A1SHB

A1SHB is P-Channel Trench Power MOSFET manufactured by H&M Semiconductor.
A1SHB datasheet preview

A1SHB Datasheet

Part number A1SHB
Download A1SHB Datasheet (PDF)
File Size 803.79 KB
Manufacturer H&M Semiconductor
Description P-Channel Trench Power MOSFET
A1SHB page 2 A1SHB page 3

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A1SHB Distributor

A1SHB Description

The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

A1SHB Key Features

  • VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

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