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IRGS4607DPBF

Insulated Gate Bipolar Transistor

IRGS4607DPBF Features

* Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter   Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent

IRGS4607DPBF Datasheet (821.57 KB)

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Datasheet Details

Part number:

IRGS4607DPBF

Manufacturer:

International Rectifier

File Size:

821.57 KB

Description:

Insulated gate bipolar transistor.
  VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.0A IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate.

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IRGS4607DPBF Insulated Gate Bipolar Transistor International Rectifier

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