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IRGS4B60KPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRGS4B60KPBF Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES

IRGS4B60KPBF Datasheet (387.58 KB)

Preview of IRGS4B60KPBF PDF

Datasheet Details

Part number:

IRGS4B60KPBF

Manufacturer:

International Rectifier

File Size:

387.58 KB

Description:

Insulated gate bipolar transistor.

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IRGS4B60KPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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