T1000TC33E - Insulated Gate Bi-Polar Transistor
Date:- 1 June, 2018 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T1000TC33E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate Peak gate emitter voltage MAXIMUM LIMITS 3300 1800 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3
