Bi-Polar Datasheet | Specifications & PDF Download

Bipolar Transistor Description: The 2N3902 is a silicon NPN transistor in a TO-3 type Package designed for use in high voltage inverters, converters,

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MC4558 Wide bandwidth dual bipolar operational amplifier Features ■ Internally compensated ■ Short-circuit protection ■ Gain and phase match between

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SS41F Low Gauss Bipolar Hall-effect Sensor DESCRIPTION The SS41F is a sensitive, bipolar Hall-effect sensor. This magnetic sensor offers reverse powe

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2N3902 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max

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PN2222A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 625mW(Tamb=25OC) * Collector current ICM: 0.6 A * Collector-ba

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NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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Ver 1.0 BCT1117B 0.8A Bipolar Linear Regulator Features  Maximum output current is 0.8A  Range of operation input voltage: Max 15V  Line Regulatio

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( DataSheet : www.DataSheet4U.com ) NPN ■■ ：、。 D13009 C B E ■■ （Ta=25℃） - - - ■■（Ta=25℃） - - - - - - - ■■ HFE(1) （Tc=25

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NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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UNISONIC TECHNOLOGIES CO., LTD U18 BIPOLAR LATCH TYPE HALL-EFFECT FOR HIGH-TEMPERARURE OPERATION DESCRIPTION U18 is a semiconductor integrated circuit

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3DD13012 AN NPN ， ， ， ， 、 。 NPN 3DD13012 AN ○R ● ● ● ● ● ● ● ● VCEO IC Ptot（TC=25℃） 400 15 120 V A W TO-3P(N) -

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GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications • • • • • 5th generation (trench gate stru

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1A Bipolar Linear Regulator  Features  Maximum output current is 1A  Range of operation input voltage: Max 15V  Line regulation: 0.03%/V (typ.) 

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www.DataSheet4U.com R 3DD13007K µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D13007K ²úÆ·ÌØÐÔ ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ Ö÷ÒªÓÃ; ¸ßƵ¿ª¹ØçÔ´ ½ÚÄܵÆç×ÓÕòÁ÷ ¸ßÆ

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MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed powe

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NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJ

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community OPA1611, OPA1612 SBOS450C – JULY 2009 – REVISED AUGUST 2014

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OP07 Very low offset single bipolar operational amplifier Features ■ Extremely low offset: 150µV/ max. ■ Low input bias current: 1.8nA ■ LOW Vio drif

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www.DataSheet4U.com R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D5032 ²úÆ·ÌØÐÔ ¡ô ¡ô ¡ô ¡ô ¡ô ¸ßÄÍѹ ±¥ºÍѹ½µ ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ »·±£¨ :VCBO=1500V :VCE(sat)=3V(max.)

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