S1T2410B02
Samsung semiconductor
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Bipolar integrated circuit designed as telephone bell replacement.
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S1T2410B01 - bipolar integrated circuit designed as a telephone bell replacement
(Samsung semiconductor)
TONE RINGER
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INTRODUCTION
The S1T2410B01/B02 is a bipolar integrated circuit designed as a telephone bell replacement.
8−DIP−300
FUN.
S1T2418D02 - TONE RINGER
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TONE RINGER WITH DRIDGE DIODE
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The S1T2418G01/D02 is a monolithic integrated circuit telephone tone ringer with bridge diode. When couple.
S1T2418G01 - TONE RINGER
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The S1T2418G01/D02 is a monolithic integrated circuit telephone tone ringer with bridge di.
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INTRODUCTION
The S1T2425A is telephone speech network integrated circuit which includes transmit amp, .
S1T - Surface Mount Glass Passivated Rectifier
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SURFACE MOUNT GLASS PASSIVATED RECTIFIER
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Features
Plastic package has Underwriters Laboratory f.
S1T - Standard Recovery SMD Rectifier Diodes
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S1A S1Y
S1A S1Y Standard Recovery SMD Rectifier Diodes SMD-Gleichrichterdioden mit Standard-Sperrverzug
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.
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(EIC)
.eicsemi.
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
S1T
PRV : 3000 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High su.
S1T3361D - LOW VOLTAGE/POWER NARROW BAND FM IF
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LOW VOLTAGE/POWER NARROW BAND FM IF
S1T3361D
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The S1T3361D is designed for use in FM dual conversion munication. It contains a ple.
S1T3361D01 - LOW VOLTAGE/POWER NARROW BAND FM IF
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LOW VOLTAGE/POWER NARROW BAND FM IF
S1T3361D
INTRODUCTION
The S1T3361D is designed for use in FM dual conversion munication. It contains a ple.
S1T8501 - SPEECH NETWORK WITH DIALER INTERFACE
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INTRODUCTION
The S1T8501 is a speech network integrated circuit which includes the following ponents.