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NE555N - General-purpose single bipolar timer
NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr.D1555 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max.E13007 - NPN Bipolar Power Transistor
MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed powe.BCT1117B - 0.8A Bipolar Linear Regulator
Ver 1.0 BCT1117B 0.8A Bipolar Linear Regulator Features Maximum output current is 0.8A Range of operation input voltage: Max 15V Line Regulatio.NE555 - General-purpose single bipolar timer
NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr.4558C - Wide bandwidth dual bipolar operational amplifier
MC4558 Wide bandwidth dual bipolar operational amplifier Features ■ Internally compensated ■ Short-circuit protection ■ Gain and phase match between.D13007K - Low-frequency amplification shell rated bipolar transistors
www.DataSheet4U.com R 3DD13007K µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D13007K ²úÆ·ÌØÐÔ ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ Ö÷ÒªÓÃ; ¸ßƵ¿ª¹ØçÔ´ ½ÚÄܵÆç×ÓÕòÁ÷ ¸ßÆ.D13009 - NPN Silicon Bipolar Transistor
( DataSheet : www.DataSheet4U.com ) NPN ■■ :、。 D13009 C B E ■■ (Ta=25℃) - - - ■■(Ta=25℃) - - - - - - - ■■ HFE(1) (Tc=25.U18 - BIPOLAR LATCH TYPE HALL-EFFECT
UNISONIC TECHNOLOGIES CO., LTD U18 BIPOLAR LATCH TYPE HALL-EFFECT FOR HIGH-TEMPERARURE OPERATION DESCRIPTION U18 is a semiconductor integrated circuit.TA7061AP - Bipolar Linear IC
www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.k.2N2222 - Bipolar NPN Device
2N2222 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package.3DD13012AN - Silicon NPN triple diffusion type bipolar transistor
3DD13012 AN NPN , , , , 、 。 NPN 3DD13012 AN ○R ● ● ● ● ● ● ● ● VCEO IC Ptot(TC=25℃) 400 15 120 V A W TO-3P(N) -.UPC1230H2 - BIPOLAR ANALOG INTEGRATED CIRCUIT
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.SS41F - Low Gauss Bipolar Hall-effect Sensor
SS41F Low Gauss Bipolar Hall-effect Sensor DESCRIPTION The SS41F is a sensitive, bipolar Hall-effect sensor. This magnetic sensor offers reverse powe.GT45F123 - Insulated Gate Bipolar Transistor
GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications • • • • • 5th generation (trench gate stru.OP07C - VERY LOW OFFSET SINGLE BIPOLAR OPERATIONAL AMPLIFIERS
OP07C VERY LOW OFFSET SINGLE BIPOLAR OPERATIONAL AMPLIFIERS . . . . . EXTREMELY LOW OFFSET : 150µV MAX LOW INPUT BIAS CURRENT : 1.8nA LOW Vio DRIFT .UPC1037 - Bipolar Analog Integrated Circuit
www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.MJL4302A - Complementary NPN-PNP Silicon Power Bipolar Transistors
MJL4281A (NPN) MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power.